Directly addressable GaN-based nano-LED arrays: fabrication and electro-optical characterization - Microsystems & Nanoengineering
www.nature.com/articles/s41378-020-00198-y
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400 nm LED 的 6 × 6 阵列和具有 200 nm LED 的 2 × 32 线阵列
不适合密集阵列中的结构布置，这将导致非常复杂的寻址方案
不适合与用于有源 LED 驱动的 ASIC 集成
nanoLED 阵列的开发
纳米级结构照明的全新光学显微镜方法
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